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NTE2920 MOSFET N-Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Isolated Central Mounting Hole D Fast Switching D +175C Operating Temperature D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W/C Gate-to-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (6-32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Typical Thermal Resistance, Case-to-Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . 0.24C/W Note Note Note Note Note 1. 2. 3. 4. 5. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25C, L = 92H, RG = 25, IAS = 90A ISD 90A, di/dt 200A/s, VDD 60V, TJ +175C Pules Width 300s, Duty Cycle 2%. Current limited by the package, (Die Current = 90A).
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250A Min 60 - - 2.0 25 - - - - - - - VDD = 30V, ID = 64A, RG = 6.2, RD = 0.45, Note 4 - - - - Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz - - - - - Typ - 0.056 - - - - - - - - - - 20 160 83 150 5.0 13 4500 2000 300 Max - - 0.014 4.0 - 25 250 100 -100 160 48 54 - - - - - - - - - Unit V V/C V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF
V(BR)DSS Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 54A, Note 4 VDS = VGS, ID = 250A VDS = 25V, ID = 54A, Note4 VDS = 60V, VGS = 0V VDS = 48V, VGS = 0V, TJ = +150C VGS = 20V VGS = -20V ID = 64A, VDS = 48V, VGS = 10V, Note 4
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance
Source-Drain Ratings and Characteristics:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Symbol IS ISM VSD trr Qrr ton Note 5 Note 1 TJ = +25C, IS = 90A, VGS = 0V, Note 4 TJ = +25C, IF = 64A, di/dt = 100A/s, Note 4 Test Conditions Min - - - - - Typ - - - 270 1.1 Max 70 360 2.5 540 2.2 Unit A A V ns C
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 300s; duty cycle 2%. Note 5. Current limited by the package, (Die Current = 90A).
.626 (15.9) Max .217 (5.5)
.197 (5.0)
See Note .787 (20.0)
.143 (3.65) Dia Max
.157 (4.0)
.559 (14.2) Min
.215 (5.45)
.047 (1.2)
.094 (2.4)
G
D
S
TO247
Note: Drain connected to metal part of mounting surface.

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